Objectives

O1: Design of high performance TE materials with large power factors using the concept of band structure engineering in oxide and silicide semiconductors.

O2: Describe at the first-principles level the electronic properties of binary oxides and binary silicides and identify the systems with narrow energy distributions generated by very anisotropic flat-and-dispersive bands.

O3: Design of high performance TE oxides and silicides using the concept of band structure engineering in the nanostructures formed by the promising binary systems.

O4: Thin film deposition and complete experimental characterization of predicted high performance TE materials.

O5: Design, fabrication and characterization of thin film TE thermocouples based on the optimized materials.